Gallium Nitride (GaN) technology has more recently been deployed as devices have become available in frequency bands used in Satcom. The key advantage of GaN is its high RF density. That is, the device delivers greater amplification in a smaller package. This enables us to develop IBUCs with higher output power in a smaller enclosure. As a result, GaN-based IBUC Gs are a viable alternative to TWTAs. And the smaller profile IBUC 2G ​model yields an advantage in many applications such as mobility. The power transfer curve of a GaN amplifier is not linear like that of a GaAs device. Therefore we have taken care in product design to compensate for the non-linearity. Although GaN amplifiers are rated at P_Sat, the important figure for comparison is the amount of output power required to achieve linear power. Terrasat IBUC G and IBUC 2G models are carefully designed for minimal back off, which translates into more usable power for your investment.